PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY

被引:99
作者
USUI, S
KIKUCHI, M
机构
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240
关键词
D O I
10.1016/0022-3093(79)90002-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Significant decrease in resistivity has been observed in glow-discharge-produced silicon (GDSi) containing 1019-1021 cm-3 phosphorous atoms. At the highest doping level a resistivity of 0.01 ω cm at room temperature was obtained. The temperature dependence of the resistivity follows the form, ρ{variant} = ρ{variant}0 exp(T0/T) 1 4, over a temperature range from 80-400 K. Optical absorption, which increased with wavelength and was roughly proportional to the conductivity, was observed in the longer wavelength side of the intrinsic absorption edge and it was ascribed to mobile charge carriers. Hall effect measurements have shown that μH of phosphorus doped GDSi is about 1 cm2 V-1s-1 and has a normal (negative) sign. © 1979.
引用
收藏
页码:1 / 1
页数:1
相关论文
共 22 条
  • [1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
    ANDERSON, DA
    SPEAR, WE
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
  • [2] BEYER W, 1977, 7TH P INT C AM LIQ S, P328
  • [3] BIEGELSEN DK, 1977, 7TH P INT C AM LIQ S, P429
  • [4] DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE
    BRODSKY, MH
    [J]. THIN SOLID FILMS, 1977, 40 (JAN) : L23 - L25
  • [5] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
    BRODSKY, MH
    FRISCH, MA
    ZIEGLER, JF
    LANFORD, WA
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
  • [6] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON
    CARLSON, DE
    WRONSKI, CR
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 95 - 106
  • [7] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON
    CHITTICK, RC
    ALEXANDE.JH
    STERLING, HF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &
  • [8] EMIN D, 1977, 7TH P INT C AM LIQ S, P249
  • [9] TEMPERATURE-DEPENDENT CONDUCTIVITY OF CLOSELY COMPENSATED PHOSPHORUS-DOPED SILICON
    FINETTI, M
    MAZZONE, AM
    PASSARI, L
    RICCO, B
    SUSI, E
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1141 - 1151
  • [10] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON
    JONES, DI
    COMBER, PGL
    SPEAR, WE
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551