SFRAME - AN EFFICIENT SYSTEM FOR DETAILED DC SIMULATION OF BIPOLAR ANALOG INTEGRATED-CIRCUITS USING CONTINUATION METHODS

This work describes a simulation package for detailed studies of biasing networks for bipolar transistors. A sophisticated transistor model is introduced which captures many second-order effects, but which causes convergence difficulties for many existing methods used for computing an operating point. Artificial parameter numerical continuation techniques are introduced, then, as a robust and efficient means of solving bias networks employing our model. Sensitivity studies and natural parameter continuation studies based on die computed operating point (or points) are also discussed.