TEMPERATURE-DEPENDENCE OF THE GROWTH ORIENTATION OF ATOMIC LAYER GROWTH MGO

被引:80
作者
HUANG, R [1 ]
KITAI, AH [1 ]
机构
[1] MCMASTER UNIV,DEPT ENGN PHYS & MAT SCI & ENGN,HAMILTON L8S 4M1,ONTARIO,CANADA
关键词
D O I
10.1063/1.107514
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-quality MgO thin films deposited on Si (111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C2H5)2 and H2O. The growth orientation of MgO changes from (111) to (100), when the temperature of the silicon substrate changes from 600 to 900-degrees-C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.
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页码:1450 / 1452
页数:3
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