(HG,ZN)TE - A NEW MATERIAL FOR IR DETECTION

The properties of MZT are analyzed according to the concept of stability after specifying it through considerations related to the Zn-Te bond, in comparison with MCT, direct single crystal growth is shown possible by THM. The ingots are of better longitudinal homogeneity and the crystals of better crystalline quality. Lower interdiffusion coefficients are found from interdiffusion experiments the results of which are interpreted by introducing a large term of interaction between cations. The better stability of the surfaces is demonstrated from electrochemical experiments and the better bonding strength from hardness data. An intense absorption excitonic line, in the absorption spectra, accounts for less non radiative recombination. Excellent implanted IR photodiodes confirm the importance of this material.