SELECTIVE WET ETCHING CHARACTERISTICS OF LATTICE-MATCHED INGAAS/INALAS/INP

被引：24

作者：

TONG, M

NUMMILA, K

KETTERSON, AA

ADESIDA, I

AINA, L

MATTINGLY, M

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] ALLIED SIGNAL AEROSP CO,COLUMBIA,MD 21045

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 10期

关键词：

Crystal lattices - Etching - Field effect transistors - Heterojunctions - Organic acids - Semiconducting indium phosphide;

D O I：

10.1149/1.2069023

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A selectivity study of the etching of lattice-matched InGaAs, InAlAs, and InP in citric acid/H2O2 solutions is reported. Selectivities as high as 500 and 187 are obtained for the etching of InGaAs on InP and InAlAs on InP, respectively. The selectivity for the etching of InGaAs on InAlAs varies from 25 at a citric acid/H2O2 solution ratio of 1 to a selectivity of 2.5 at a solution ratio of 10. The activation energies and the etch profiles of InGaAs and InAlAs are also reported. The implications of this selectivity variation for the fabrication of InAlAs/InGaAs/InP heterostructure field-effect transistors are discussed.

引用

页码：L91 / L93

页数：3

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