POSSIBLE MODEL OF AMORPHOUS SILICON AND GERMANIUM

被引：10

作者：

BETTERIDGE, GP ^{[1
]}

机构：

[1] CAVENDISH LAB, MADINGLEY RD, CAMBRIDGE CB3 0HE, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 23期

关键词：

D O I：

10.1088/0022-3719/6/23/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L427 / L432

页数：6

共 12 条

[1]

COCHRAN W, 1972, PHYS REV B, V8, P623

[2]

Grigorovici R., 1969, Journal of Non-Crystalline Solids, V1, P303, DOI 10.1016/0022-3093(69)90027-1

[3]

Grigorovici R., 1969, Journal of Non-Crystalline Solids, V1, P371, DOI 10.1016/0022-3093(69)90020-9

[4] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

LEY, L ;

SHIRLEY, DA ;

POLLAK, R ;

KOWALCZYK, S .

PHYSICAL REVIEW LETTERS, 1972, 29 (16) :1088-+

[5] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J].

MOSS, SC ;

GRACZYK, JF .

PHYSICAL REVIEW LETTERS, 1969, 23 (20) :1167-&

[6]

Ortenburger I.B., 1972, J NONCRYST SOLIDS, V8-10, P653

[7]

Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

[8] STRUCTURE OF AMORPHOUS SI AND GE [J].

RUDEE, ML ;

HOWIE, A .

PHILOSOPHICAL MAGAZINE, 1972, 25 (04) :1001-&

[9] OBSERVATION OF ORDERED DOMAINS IN AMORPHOUS GE BY DARK-FIELD ELECTRON MICROSCOPY [J].

RUDEE, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (01) :K1-&

[10] STRUCTURE OF AMORPHOUS GE AND SI [J].

RUDEE, ML .

THIN SOLID FILMS, 1972, 12 (02) :207-&

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