TRANSIENT EXPERIMENTS FROM THE STEADY-STATE IN AMORPHOUS-SILICON - WEAK RECOMBINATION AND DENSITY OF STATES

被引：5

作者：

MENDOZA, D

PICKIN, W

机构：

[1] Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México. Apartado Postal 70-360, Cd. Universitaria

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 73卷 / 02期

关键词：

D O I：

10.1016/0038-1098(90)91026-D

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have performed transient experiments from the steady state in hydrogenated amorphous silicon. Based on multiple trapping theory and assuming a decreasing density of states towards the conduction band edge, we explain successfully the decay behavior. We also find that the material studied falls in the weak recombination regime, i.e., trapping being a faster process than recombination. Finally, the temperature dependence of the capture coefficient and the energy dependence of the attempt-to-escape frequency are reported for this system. © 1990.

引用

页码：101 / 104

页数：4