ON THE LOCATION OF YTTERBIUM IN GAP AND GAAS LATTICES

被引：14

作者：

KOZANECKI, A ^{[1
]}

GROETZSCHEL, R ^{[1
]}

机构：

[1] ZENT INST KERNFORSCH,DDR-8051 DRESDEN,GER DEM REP

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3315 / 3317

页数：3

共 26 条

[11] IDENTIFICATION AND CHARACTERIZATION OF PRECIPITATES IN (GD,HO)-DOPED GASB CRYSTAL [J].

JASIOLEK, G ;

RACZYNSKA, J ;

GORECKA, J .

JOURNAL OF CRYSTAL GROWTH, 1986, 78 (01) :105-112

[12]

KASATKIN VA, 1978, SOV PHYS SEMICOND+, V12, P974

[13]

KASATKIN VA, 1980, SOV PHYS SEMICOND+, V14, P1092

[14]

KASATKIN VA, 1979, SOV PHYS SEMICOND+, V13, P1207

[15]

KASATKIN VA, 1980, FIZ TEKH POLUPROV, V14, P1832

[16]

KASATKIN VA, 1978, FIZ TEKH POLUPROV, V12, P1644

[17] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP [J].

NAKAGOME, H ;

TAKAHEI, K ;

HOMMA, Y .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) :345-356

[18] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

APPLETON, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :871-887

[19] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J].

POMRENKE, GS ;

ENNEN, H ;

HAYDL, W .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :601-610

[20] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J].

SMITH, RS ;

MULLER, HD ;

ENNEN, H ;

WENNEKERS, P ;

MAIER, M .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :49-51

← 1 2 3 →