RF PERFORMANCE OF A NOVEL PLANAR MILLIMETER-WAVE DIODE INCORPORATING AN ETCHED SURFACE CHANNEL

被引：14

作者：

GARFIELD, DG

MATTAUCH, RJ

WEINREB, S

机构：

[1] MARTIN MARIETTA CORP LABS,BALTIMORE,MD 21227

[2] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22901

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/22.64597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new whiskerless millimeter-wave mixer diode has performance comparable to that of the highest quality whisker-contacted diodes. The diode uses an etched surface channel and planar air bridge to obtain greatly reduced parasitic capacitance. At 94 GHz the room-temperature diode exhibited a conversion loss of 5.3 +/- 0.5 dB and an equivalent input noise temperature of 518 +/- 50 K SSB.

引用

页码：1 / 5

页数：5

共 23 条

[1] ALLEN RPG, 1973, 1973 P EUR MICR C
[2] LOW-PARASITIC, PLANAR SCHOTTKY DIODES FOR MILLIMETER-WAVE INTEGRATED-CIRCUITS
ARCHER, JW
BATCHELOR, RA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (01) : 15 - 22
[3] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY
BALLAMY, WC
CHO, AY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 481 - 484
[4] Bauhahn P., 1984, IEEE 1984 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No. 84CH2042-0), P70
[5] BISHOP WL, 1987, IEEE MTT S INT MICR, P607
[6] CALVIELLO JA, 1981, DIG IEEE INT ELECTRO, P692
[7] CARDIASMENOS AG, 1979, IEEE MIT S INT MICRO, P22
[8] SUB-HARMONICALLY PUMPED MILLIMETER-WAVE MIXERS
CARLSON, ER
SCHNEIDER, MV
MCMASTER, TF
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (10) : 706 - 715
[9] HIGH-PERFORMANCE QUASI-OPTICAL GAAS MONOLITHIC MIXER AT 110 GHZ
CLIFTON, BJ
ALLEY, GD
MURPHY, RA
MROCZKOWSKI, IH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 155 - 158
[10] CONG HI, 1979, IEEE T MICROW THEORY, V27, P245

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