DOUBLE-DRIFT-REGION (P+PNN+) AVALANCHE DIODE OSCILLATORS

被引:38
作者
SCHARFET.DL
EVANS, WJ
JOHNSTON, RL
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 07期
关键词
D O I
10.1109/PROC.1970.7858
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1131 / &
相关论文
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SCHARFETTER DL, 1969, IEEE T ELECTRON DEVI, VED16, P64
[12]  
SCHARFETTER DL, TO BE PUBLISHED
[13]   HIGH-POWER MILLIMETER WAVE IMPATT OSCILLATORS WITH BOTH HOLE AND ELECTRON DRIFT SPACES MADE BY ION IMPLANTATION [J].
SEIDEL, TE ;
SCHARFET.DL .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1135-&