FUSING SILICON-WAFERS WITH LOW MELTING TEMPERATURE GLASS

被引：14

作者：

FIELD, LA ^{[1
]}

MULLER, RS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

Glass - Integrated Circuits - Semiconductor Devices; MOS;

D O I：

10.1016/0924-4247(90)87063-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes research on a low-temperature technique for fusing two silicon wafers together. The work has focused on integrating the bonding process with MOS IC processing. A seal that is apparently hermetic is achieved at 450 °C between wafers which have gone through the individual processing steps needed to fabricate MOS capacitors and electrical leads through the sealed package. In order to use this process to bond at low temperature, the bonding surfaces must be smooth, clean, and phosphorus free. © 1990.

引用

页码：935 / 938

页数：4

共 8 条

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BLACK, RD ;

ARTHUR, SD ;

GILMORE, RS ;

LEWIS, N ;

HALL, EL ;

LILLQUIST, RD .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2773-2777

[2]

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[3]

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[4]

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[5]

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[6]

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[7]

PETERSEN K, 1988, JUN IEEE SOL STAT SE, P144

[8]

SHOJI S, 1988, 7TH SENS S TOK JAP, P217

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