PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN AMORPHOUS-SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：3

作者：

COSTA, J

ROURA, P

SULIMOV, NA

SARDIN, G

CAMPMANY, J

MORANTE, JR

BERTRAN, E

机构：

[1] Departament de Fisica Aplicada i Electronica, Universitat de Barcelona

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 1995年 / 11卷 / 07期

关键词：

D O I：

10.1080/17432847.1995.11948728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence emission in silicon powder grown by plasma enhanced chemical vapour deposition has a very unusual dependence on pressure. Its intensity diminishes exponentially, I(PL)proportional to I-0 exp(-p/p(0)), where p(o) has a value of several pascals. Consequently it is detectable only under vacuum. This dependence is analysed within the framework of a multistep multiphoton excitation process. It is shown that all exponential dependence on pressure of the dynamic constants (lifetimes and optical cross-sections involved in the model) can account qualitatively for all the experimental results.

引用

页码：707 / 710

页数：4

共 15 条

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