DEPTH DISTRIBUTION OF DISORDER PRODUCED BY ROOM-TEMPERATURE 40 KEV N+ ION IRRADIATION OF SILICON

被引：18

作者：

TITOV, AI ^{[1
]}

CHRISTODOULIDES, CE ^{[1
]}

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 41卷 / 02期

关键词：

D O I：

10.1080/00337577908236954

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The depth distribution of disorder produced by room temperature 40 keV N plus ion irradiation of silicon was monitored by high depth resolution RBS and channelling techniques. A bimodal depth distribution of disorder resulted under certain implantation conditions and a significant dependence of the damage on N plus flux and fluence was observed.

引用

页码：107 / 111

页数：5

共 22 条

[1]

ABROYAN IA, 1977, SOV PHYS SEMICOND+, V11, P712

[2]

ABROYAN IA, 1976, IZV AN SSSR P, V40, P1746

[3]

ABROYAN IA, 1968, SOV PHYS-SOLID STATE, V10, P2716

[4]

ABROYAN IA, 1977, 7 P INT C AT COLL SO

[5] EFFECT OF IRRADIATION TEMPERATURE ON SI AMORPHIZATION PROCESS [J].

BARANOVA, EC ;

GUSEV, VM ;

MARTYNENKO, YV ;

HAIBULLIN, IB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03) :157-162

[6]

Carter G., 1976, ION IMPLANTATION SEM

[7] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J].

DENNIS, JR ;

HALE, EB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04) :219-225

[8]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[9]

Gashtold V.N., 1975, SOV PHYS SEMICOND, V9, P554

[10] PECULIARITIES OF SILICON AMORPHIZATION AT ION-BOMBARDMENT [J].

GERASIMOV, AI ;

ZORIN, EI ;

TETELBAUM, DI ;

PAVLOV, PV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02) :679-+

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