BROAD-BAND OPERATION OF INGAASP-INGAAS GRIN-SC-MQW BH AMPLIFIERS WITH 115MW OUTPUT POWER

被引：22

作者：

BAGLEY, M

SHERLOCK, G

COOPER, DM

WESTBROOK, LD

ELTON, DJ

WICKES, HJ

SPURDENS, PC

DEVLIN, WJ

机构：

[1] British Telecom Research Laboratories, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 08期

关键词：

Amplifiers; Gallium arsenide; Semiconductor devices and materials;

D O I：

10.1049/el:19900333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broadband operation of GRIN-SC-MQW BH amplifiers is reported with 115mW output power at 1.54µm and 3dB gain compression. Gain is flat to 0.7 dB over the range 1.42-1.55µm. Polarisation sensitivity reduces from 4.5dB at 1.55µm to 1.4 dB at 1.415µm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：512 / 513

页数：2

共 8 条

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[8] GAIN, POLARIZATION SENSITIVITY AND SATURATION POWER OF 1.5-MU-M NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER
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[J]. ELECTRONICS LETTERS, 1987, 23 (07) : 332 - 334

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