EFFECTS OF A HOT 2-DIMENSIONAL ELECTRON-GAS ON OPTICAL-PROPERTIES OF MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES

被引：7

作者：

CHEN, WM ^{[1
]}

MONEMAR, B ^{[1
]}

SORMAN, E ^{[1
]}

HOLTZ, PO ^{[1
]}

SUNDARAM, M ^{[1
]}

MERZ, JL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of a hot two-dimensional electron gas (2DEG) on optical properties of modulation-doped GaAs/AlGaAs heterostructures have been investigated by photoluminescence (PL) and optically detected cyclotron resonance (ODCR) techniques. A decrease of the PL intensity from shallow excitons and an enhancement of the interband recombination between the 2DEG (confined in a notch potential near the heterointerface) and photo-excited holes are observed, when the cyclotron resonance (CR) condition for electrons is fulfilled. The mechanisms responsible for these observations are discussed in terms of a hot 2DEG heated in the microwave (MW) field. The angular dependence of the ODCR peak proves the 2D character of the corresponding hot electrons. In this way we identify these PL emissions as arising from the same GaAs active layer.

引用

页码：B253 / B255

页数：3

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