共 14 条
[4]
ELECTRON-CONCENTRATION AND BUFFER-WIDTH DEPENDENCE OF HALL-MOBILITY IN GAAS-GA1-XALXAS MULTIPLE-QUANTUM-WELL STRUCTURES
[J].
PHYSICAL REVIEW B,
1984, 29 (10)
:5778-5787
[5]
ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1982, 21 (11)
:L675-L676
[9]
PROPERTIES OF ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS WITH MANY OCCUPIED ELECTRIC SUBBANDS .1. SCREENING AND IMPURITY SCATTERING
[J].
PHYSICAL REVIEW B,
1970, 2 (04)
:1024-&
[10]
THANG NT, 1984, SURF SCI, V142, P266, DOI 10.1016/0039-6028(84)90319-4