LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS

被引：170

作者：

LEE, K

SHUR, MS

DRUMMOND, TJ

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期

关键词：

D O I：

10.1063/1.331922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6432 / 6438

页数：7

共 27 条

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[2] DILORENZO JV, 1982, INT ELECTRON DEVICE, V25, P578
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[4] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
DRUMMOND, TJ
MORKOC, H
HESS, K
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234
[5] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
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CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028
[6] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
DRUMMOND, TJ
MORKOC, H
LEE, K
SHUR, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
[7] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[8] FELL B, 1978, J PHYS CHEM SOLIDS, V34, P221
[9] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
HESS, K
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[10] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
FUJII, T
MIMURA, T
NANBU, K
SAITO, J
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458

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