MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：66

作者：

LIN, BJF ^{[1
]}

TSUI, DC ^{[1
]}

PAALANEN, MA ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：695 / 697

页数：3

共 18 条

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[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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STORMER, HL
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[3] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES
FANG, FF
HOWARD, WE
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &
[4] FROHLICH H, 1954, ADV PHYS, V3, P324
[5] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
HESS, K
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[6] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE
ISHIKAWA, T
SAITO, J
SASA, S
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676
[7] LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS
LEE, K
SHUR, MS
DRUMMOND, TJ
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6432 - 6438
[8] MANY-BODY CORRECTIONS TO POLARIZABILITY OF 2-DIMENSIONAL ELECTRON-GAS
MALDAGUE, PF
[J]. SURFACE SCIENCE, 1978, 73 (01) : 296 - 302
[9] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES
MENDEZ, EE
PRICE, PJ
HEIBLUM, M
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 294 - 296
[10] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE
MORI, S
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) : 865 - 873

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