NEAR-UV ELECTROLUMINESCENCE FROM A ZNCDSSE/ZNSSE METAL-INSULATOR-SEMICONDUCTOR DIODE ON GAP GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

ICHINO, K

ONISHI, T

KAWAKAMI, Y

FUJITA, S

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9A期

关键词：

MBE; ZNCDSSE-ZNSSE QW; GAP SUBSTRATE; MIS-LED; NEAR-UV LIGHT EMISSION;

D O I：

10.1143/JJAP.32.L1200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A near-UV light-emitting diode based on metal-insulator-semiconductor structure using a ZnCdSSe/ZnSSe single quantum well system on a GaP substrate is demonstrated. The device emits intense near-UV light at a wavelength of 391 nm from the ZnCdSSe quantum well with current injection at 77 K.

引用

收藏

页码：L1200 / L1202

页数：3

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