1-F NOISE IN SILICON DIODES

被引：4

作者：

JANTSCH, O ^{[1
]}

FEIGT, I ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,ERLANGEN,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0038-1101(73)90074-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1517 / 1520

页数：4

共 31 条

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[J]. PHYSICAL REVIEW, 1956, 103 (01): : 72 - 82
[4] BITTEL H, 1971, RAUSCHEN
[5] Burstein E., 1957, SEMICONDUCTOR SURFAC
[6] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY
CHRISTEN.S
LUNDSTRO.I
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &
[7] COLLIGAN MB, 1972, LOW FREQUENCY NOISE
[8] THEORY OF SURFACE POLARONS
EVANS, E
MILLS, DL
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (09) : 1093 - &
[9] UPPER FREQUENCY LIMIT OF 1/F NOISE AND SURFACE RELAXATION TIME
FEIGT, I
JANTSCH, O
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 391 - +
[10] FEIGT I, 1972, THESIS ERLANGEN