UPPER FREQUENCY LIMIT OF 1/F NOISE AND SURFACE RELAXATION TIME

被引：7

作者：

FEIGT, I

JANTSCH, O

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 05期

关键词：

D O I：

10.1016/0038-1101(71)90189-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：391 / +

页数：1

共 40 条

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J].

ABOWITZ, G ;

ARNOLD, E ;

LEVENTHA.EA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :775-+

[2]

BALDINGER E, 1968, HELV PHYS ACTA, V41, P313

[3] STUDY OF 1-F NOISE IN SEMICONDUCTOR FILAMENTS [J].

BESS, L .

PHYSICAL REVIEW, 1956, 103 (01) :72-82

[4] INVESTIGATION OF 1/F NOISE SPECTRA [J].

BESS, L ;

KISNER, LS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3458-&

[5]

BOZIC SM, 1966, ELECTRON ENG, V38, P40

[6] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J].

CHRISTEN.S ;

LUNDSTRO.I .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :813-&

[8] SELF-DISSOCIATION AND PROTONIC CHARGE TRANSPORT IN WATER AND ICE [J].

EIGEN, M ;

DEMAEYER, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 247 (1251) :505-533

[9] ZUR PROTONISCHEN LEITFAHIGKEIT VON EIS-EINKRISTALLEN BEI TIEFEN TEMPERATUREN UND HOHEN FELDSTARKEN [J].

ENGELHAR.H ;

RIEHL, N .

PHYSIK DER KONDENSITERTEN MATERIE, 1966, 005 (02) :73-+

[10]

FEIGT I, 1970, MAY S SEM DET NUCL R

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