THE INHIBITION-MECHANISM IN POLARIZATION BISTABLE SEMICONDUCTOR-LASERS

被引：20

作者：

ROPARS, G ^{[1
]}

LEFLOCH, A ^{[1
]}

JEZEQUEL, G ^{[1
]}

LENAOUR, R ^{[1
]}

CHEN, YC ^{[1
]}

LIU, JM ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1027 / 1032

页数：6

共 18 条

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APPLIED PHYSICS LETTERS, 1985, 46 (02) :123-125

[8] EFFECT OF STRESS ON THE POLARIZATION OF STIMULATED-EMISSION FROM INJECTION-LASERS [J].

DUTTA, NK ;

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JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :65-70

[9] EFFECT OF UNIAXIAL-STRESS ON OPTICAL GAIN IN SEMICONDUCTORS [J].

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[10] THEORY OF EFFECT OF STRAIN ON GAAS ELECTROLUMINESCENT DIODES [J].

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