RAMAN-SCATTERING IN AIGAP ALLOYS

被引：15

作者：

ARMELLES, G

CALLEJA, JM

MUNOZ, E

机构：

[1] ESCUELA TECN SUPER INGN TELECOMMUN, CSIC, CNM, E-28040 MADRID, SPAIN

[2] UNIV AUTONOMA MADRID, DPTO FIS APLICADA, E-28049 MADRID, SPAIN

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 08期

关键词：

BAND STRUCTURE - OPTOELECTRONIC DEVICES - PHONONS - RAMAN SCATTERING - Applications - SEMICONDUCTING ALUMINUM COMPOUNDS - Testing;

D O I：

10.1016/0038-1098(88)90503-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman spectra of Al//xGa//1// minus //xP alloys with Al concentration ranging from x equals 0. 10 to x equals 0. 79 are presented. Two longitudinal optical (LO) bands have been observed, which are related to GaP and AlP respectively (two mode behavior). The compositional variation of the LO and TO phonon frequencies has been measured and explained in terms of the MREI model.

引用

页码：779 / 782

页数：4

共 11 条

[1]

Bairamov B. Kh., 1980, Soviet Technical Physics Letters, V6, P618

[2] OPTICAL STUDIES OF VIBRATIONAL PROPERTIES OF DISORDERED SOLIDS [J].