TEMPERATURE BEHAVIOR OF BRIGHT LUMINESCENCE FROM LPE-GROWN GA1-XALXP STRUCTURES

被引：9

作者：

ERMAKOV, ON

IGNATKINA, RS

KARATSYUBA, AP

SUSHKOV, VP

AKSENOV, VF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 04期

关键词：

D O I：

10.1109/T-ED.1983.21115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：268 / 270

页数：3

共 9 条

[1]

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[2]

Bergh A., 1976, LIGHT EMITTING DIODE

[3] ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP [J].

CRAFORD, MG ;

GROVES, WO ;

HERZOG, AH ;

HILL, DE .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2751-+

[4]

ERMAKOV ON, 1981, SOV J APPL SPECTROSC, V35, P844

[5] AVALANCHE BREAKDOWN IN GAP [J].

PILKUHN, MH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3162-&

[6] GREEN LIGHT EMISSION FROM ZN-DOPED ALXGA1-XP ALLOYS [J].

SONOMURA, H ;

NANMORI, T ;

MIYAUCHI, T .

APPLIED PHYSICS LETTERS, 1973, 22 (10) :532-533

[7]

VAVILIV VS, 1978, SOV PHYS TECH SEMICO, V12, P1686

[8] GREEN ELECTROLUMINESCENCE IN GAP DIODES AND ITS CORRELATION WITH CATHODOLUMINESCENCE MEASUREMENTS [J].

WIGHT, DR ;

BIRBECK, JCH ;

TRUSSLER, JW ;

YOUNG, ML .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (13) :1622-1639

[9]

YNOVICH AE, 1972, RAD RECOMBINATION SE

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