GREEN ELECTROLUMINESCENCE IN GAP DIODES AND ITS CORRELATION WITH CATHODOLUMINESCENCE MEASUREMENTS

被引:18
作者
WIGHT, DR [1 ]
BIRBECK, JCH [1 ]
TRUSSLER, JW [1 ]
YOUNG, ML [1 ]
机构
[1] SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
关键词
D O I
10.1088/0022-3727/6/13/310
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1622 / 1639
页数:18
相关论文
共 29 条
[1]   ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J].
ALLEN, JW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :1936-&
[2]   MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].
BACHRACH, RZ ;
LORIMOR, OG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&
[3]  
BHARGAVA RN, 1970, 10 P INT C PHYS SEM, P640
[4]  
Calverley A., 1970, Solid-State Electronics, V13, P382, DOI 10.1016/0038-1101(70)90189-9
[5]   MONOLITHIC LIGHT EMITTING DIODE ARRAYS USING GALLIUM PHOSPHIDE [J].
CARTER, MA ;
MOTTRAM, A ;
PEAKER, AR ;
SUDLOW, PD ;
WHITE, T .
NATURE, 1971, 232 (5311) :469-&
[6]   ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP [J].
CRAFORD, MG ;
GROVES, WO ;
HERZOG, AH ;
HILL, DE .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2751-+
[7]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[8]   INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERSTROM, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+
[9]   GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE [J].
DEAN, PJ ;
GERSHENZON, M ;
KAMINSKY, G .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5332-+
[10]   LUMINESCENCE AND MINORITY CARRIER RECOMBINATION IN P-TYPE GAP(ZN,O) [J].
DISHMAN, JM ;
DIDOMENI.M ;
CARUSO, R .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1988-+