INELASTIC TUNNELING IN ALAS-GAAS-ALAS HETEROSTRUCTURES

被引：66

作者：

MENDEZ, EE ^{[1
]}

CALLEJA, E ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.100046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：977 / 979

页数：3

共 10 条

[1] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS
GOODHUE, WD
SOLLNER, TCLG
LE, HQ
BROWN, ER
VOJAK, BA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088
[2] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HASE, I
KAWAI, H
KANEKO, K
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3792 - 3797
[3] Kane E. O., 1969, Tunneling phenomena in solids, P1
[4] TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS
MENDEZ, EE
CALLEJA, E
WANG, WI
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 6026 - 6029
[5] RESONANT TUNNELING VIA X-POINT STATES IN ALAS-GAAS-ALAS HETEROSTRUCTURES
MENDEZ, EE
WANG, WI
CALLEJA, E
DASILVA, CETG
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1263 - 1265
[6] TUNNELING IN ALGAAS BY GAMMA-X SCATTERING
PRICE, PJ
[J]. SURFACE SCIENCE, 1988, 196 (1-3) : 394 - 398
[7] PERPENDICULAR TRANSPORT ACROSS (AL,GA) AS AND THE GAMMA-TRANSITION TO X-TRANSITION
SOLOMON, PM
WRIGHT, SL
LANZA, C
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (06) : 521 - 525
[8] Sze SM., 1981, PHYSICS SEMICONDUCTO, p[534, 343]
[9] DEPENDENCE OF RESONANT TUNNELING CURRENT ON AL MOLE FRACTIONS IN ALXGA1-XAS-GAAS-ALXGA1-XAS DOUBLE BARRIER STRUCTURES
TSUCHIYA, M
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1503 - 1505
[10] TUNNELING IN ALAS/GAAS/ALAS HETEROSTRUCTURES UNDER HYDROSTATIC-PRESSURE
WANG, WI
CALLEJA, E
MENDEZ, EE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 775 - 776

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