PRODUCTION OF EXTREME-PURITY ALUMINUM AND SILICON BY FRACTIONAL CRYSTALLIZATION PROCESSING

被引:27
作者
DAWLESS, RK
TROUP, RL
MEIER, DL
ROHATGI, A
机构
[1] WESTINGHOUSE RES,PITTSBURGH,PA 15235
[2] GEORGIA INST TECHNOL,ATLANTA,GA 30332
关键词
CRYSTALLIZATION - SEMICONDUCTING SILICON;
D O I
10.1016/0022-0248(88)90073-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Large scale fractional crystallization is used commercially at Alcoa to produce extreme purity aluminum (99. 999 plus % Al). The crystallization process achieves segregation coefficients which are close to theoretical at normal yields, and this, coupled with the scale of the units, allows practical production of this material. The silicon purification process involves crystallization of Si from molten aluminum alloys containing about 30% silicon. The crystallites from this process are further treated to remove residual Al and an extreme purity ingot is obtained. In production of both extreme purity Al and Si, impurities are rejected to the remaining melt as the crystals form and some separation is achieved by draining this downgraded melt from the unit. Purification of this downgrade by crystallization has also been demonstrated for both systems and is important for achieving high recoveries.
引用
收藏
页码:68 / 74
页数:7
相关论文
共 4 条
[1]  
PFANN WG, 1952, T AM I MIN MET ENG, V194, P747
[2]  
Scheil E., 1942, INT J MATER RES, V34, P70
[3]   SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].
TRUMBORE, FA .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233
[4]  
WRIGHT EH, 1960, 15 AL CO AM ALC RES, P26