NOVEL MICROWAVE GAAS FIELD-EFFECT TRANSISTORS

被引：9

作者：

VOKES, JC

HUGHES, BT

WIGHT, DR

DAWSEY, JR

SHRUBB, SJW

机构：

[1] Royal Signals and Radar Establishment, Baldock, Herts.

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 20期

关键词：

Schottky-gate field-effect transistors; Solid-state microwave devices;

D O I：

10.1049/el:19790447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technology is described for the fabrication of Schottky-barrier f.e.t.s with electrodes on either or both sides of a submicrometre thick single-crystal layer of GaAs. Preliminary d.c. and microwave results are given together with possible advantages of these novel f.e.t. structures. © 1979, Controller, HMSO. All rights reserved.

引用

页码：627 / 629

页数：3

共 6 条

[1] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE [J].

ANTYPAS, GA ;

EDGECUMBE, J .

APPLIED PHYSICS LETTERS, 1975, 26 (07) :371-372

[2]

BREWITTTAYLOR CR, 1978, 8TH P EUR MICR C PAR, P415

[3]

GRIFFITHS RJM, 1979, ELECTRON LETT, V15

[4] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[5]

VOKES JC, 1977, INT MICROWAVE S DIGE

[6] COMPUTER-SIMULATION OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS USING MONTE-CARLO METHODS [J].

WARRINER, RA .

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1977, 1 (04) :105-110

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