ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS

被引:15
作者
HARPER, RE
JOHNSTON, C
BLAMIRES, NG
CHALKER, PR
BUCKLEYGOLDER, IM
机构
[1] Microelectronics Materials Centre, Atomic Energy Authority Industrial Technology, Harwell, Didcot
关键词
D O I
10.1016/0257-8972(91)90300-L
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The electrical properties of doped and undoped chemical vapour deposition (CVD) diamond films determine their potential active or passive applications in electronic devices. Polycrystalline CVD diamond films may include high defect densities as well as unintentional dopants such as hydrogen, which are a sensitive function of deposition parameters. We investigated the electrical conductivity of doped and undoped CVD diamond films deposited onto silicon or alumina by a variety of methods. The behaviour of these films before and after simple heat treatments is reported. Ion implantation was used successfully to dope bulk diamond. We report on a preliminary investigation of boron implantation into CVD diamond films.
引用
收藏
页码:344 / 355
页数:12
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