CONVERSION GAIN OF MESFET DRAIN MIXERS

被引：12

作者：

BEGEMANN, G

JACOB, A

机构：

[1] Institut für Hochfrequenztechnik, Technische Universität Braunschweig, D-3300 Braunschweig

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 18期

关键词：

Field-effect transistor circuits; Mixers; Schottky-barrier field-effect circuits; Semiconductor device models;

D O I：

10.1049/el:19790407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical analysis of the gain properties of m.e.s.f.e.t. drain mixers is presented. The m.e.s.f.e.t. model includes the nonlinearity of both the transconductance and the drain resistance. For a special case, a simple analytical expression for the gain is given. Numerical results for a typical example are briefly presented as an illustration. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：567 / 568

页数：2