PERFORMANCE OF GAAS MESFET MIXERS AT X BAND

被引:59
作者
PUCEL, RA [1 ]
MASSE, D [1 ]
BERA, R [1 ]
机构
[1] RAYTHEON CO,DIV RES,WALTHAM,MA 02154
关键词
D O I
10.1109/TMTT.1976.1128854
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:351 / 360
页数:10
相关论文
共 7 条
  • [1] CHEADLE D, 1973, MICROWAVES NOV, P48
  • [2] CHEADLE D, 1973, MICROWAVES DEC, P58
  • [3] INTEGRATED GAAS FET MIXER PERFORMANCE AT X-BAND
    PUCEL, RA
    MASSE, D
    BERA, R
    [J]. ELECTRONICS LETTERS, 1975, 11 (09) : 199 - 200
  • [4] PUCEL RA, 1975, IEEE INT SOLID STATE, P62
  • [5] PUCEL RA, 1975, 5TH P BIENN CORN EL
  • [6] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
  • [7] PERFORMANCE OF GAAS FIELD-EFFECT TRANSISTORS AS MICROWAVE MIXERS
    SITCH, JE
    ROBSON, PN
    [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (03) : 399 - 400