INTEGRATED GAAS FET MIXER PERFORMANCE AT X-BAND

被引:4
作者
PUCEL, RA [1 ]
MASSE, D [1 ]
BERA, R [1 ]
机构
[1] RAYTHEON CO,RES DIV,WALTHAM,MA 02154
关键词
D O I
10.1049/el:19750152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:199 / 200
页数:2
相关论文
共 3 条
[1]  
LUXTON HEG, 1973, EUROPEAN SOLID STATE, P206
[2]   PERFORMANCE OF GAAS FIELD-EFFECT TRANSISTORS AS MICROWAVE MIXERS [J].
SITCH, JE ;
ROBSON, PN .
PROCEEDINGS OF THE IEEE, 1973, 61 (03) :399-400
[3]   NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].
STATZ, H ;
HAUS, HA ;
PUCEL, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) :549-562