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INTEGRATED GAAS FET MIXER PERFORMANCE AT X-BAND
被引:4
作者
:
PUCEL, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
PUCEL, RA
[
1
]
MASSE, D
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
MASSE, D
[
1
]
BERA, R
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
BERA, R
[
1
]
机构
:
[1]
RAYTHEON CO,RES DIV,WALTHAM,MA 02154
来源
:
ELECTRONICS LETTERS
|
1975年
/ 11卷
/ 09期
关键词
:
D O I
:
10.1049/el:19750152
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:199 / 200
页数:2
相关论文
共 3 条
[1]
LUXTON HEG, 1973, EUROPEAN SOLID STATE, P206
[2]
PERFORMANCE OF GAAS FIELD-EFFECT TRANSISTORS AS MICROWAVE MIXERS
[J].
SITCH, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
SITCH, JE
;
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
ROBSON, PN
.
PROCEEDINGS OF THE IEEE,
1973,
61
(03)
:399
-400
[3]
NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
[J].
STATZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
STATZ, H
;
HAUS, HA
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
HAUS, HA
;
PUCEL, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
PUCEL, RA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(09)
:549
-562
←
1
→
共 3 条
[1]
LUXTON HEG, 1973, EUROPEAN SOLID STATE, P206
[2]
PERFORMANCE OF GAAS FIELD-EFFECT TRANSISTORS AS MICROWAVE MIXERS
[J].
SITCH, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
SITCH, JE
;
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
ROBSON, PN
.
PROCEEDINGS OF THE IEEE,
1973,
61
(03)
:399
-400
[3]
NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
[J].
STATZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
STATZ, H
;
HAUS, HA
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
HAUS, HA
;
PUCEL, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
PUCEL, RA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(09)
:549
-562
←
1
→