NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS

被引：115

作者：

STATZ, H

HAUS, HA

PUCEL, RA

机构：

[1] RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA

[2] RAYTHEON CO, MICROWAVE & POWER TUBE DIV, MICROWAVE TRANSISTOR GRP, WALTHAM, MA 02154 USA

[3] MIT, ELECT ENGN DEPT, CAMBRIDGE, MA USA

[4] MIT, RES LAB ELECTR, CAMBRIDGE, MA USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 09期

关键词：

D O I：

10.1109/T-ED.1974.17966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：549 / 562

页数：14

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