THE ELECTRONIC EFFECT OF TI4+, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL-PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS - APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES

被引：19

作者：

CAMPET, G ^{[1
]}

HAN, SD ^{[1
]}

WEN, SJ ^{[1
]}

MANAUD, JP ^{[1
]}

PORTIER, J ^{[1
]}

XU, Y ^{[1
]}

SALARDENNE, J ^{[1
]}

机构：

[1] UNIV BORDEAUX 1,ETUD MAT MICROELECTRON LAB,F-33405 TALENCE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 19卷 / 03期

关键词：

D O I：

10.1016/0921-5107(93)90200-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of In2O3 (IO) and Sn-doped In2O3 (ITO) ceramics doped with Ti4+, Zr4+ or Ge4+ are investigated. The choice of the doping elements arises from their high value of the ''Lewis acid strength''. Related to that, it has been shown that the doping of IO or ITO ceramics with Zr4+, and most interestingly with Ti4+ or Ge4+, increases both the carrier concentration and the mobility. This approach has been successfully applied to thin films, and new highly-transparent conductive electrodes have been realized.

引用

页码：285 / 289

页数：5

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