ELECTRICAL-PROPERTIES OF PURE IN2O3 AND SN-DOPED IN2O3 SINGLE-CRYSTALS AND CERAMICS

被引：21

作者：

WEN, SJ ^{[1
]}

COUTURIER, G ^{[1
]}

CHAMINADE, JP ^{[1
]}

MARQUESTAUT, E ^{[1
]}

CLAVERIE, J ^{[1
]}

HAGENMULLER, P ^{[1
]}

机构：

[1] UNIV BORDEAUX 1,LEMME,F-33405 TALENCE,FRANCE

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1992年 / 101卷 / 02期

关键词：

D O I：

10.1016/0022-4596(92)90176-V

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The transport properties of undoped and Sn-doped In2O3 (ITO) single crystals prepared by a flux method are reported. Hall measurements are detailed: they show that the mobility increases as the Sn dopant concentration increases. A maximum value of 100 cm2V-1s-1 is measured with an electron concentration of about 1.6 × 1020 cm-3. However, at high dopant concentration the mobility decreases again and the presence of neutral entities such as (SnO)x is expected to be responsible for this behavior. Some results dealing with undoped and Sn- or Pb-doped In2O3 ceramics are also presented and discussed. © 1992.

引用

页码：203 / 210

页数：8

共 16 条

[1] HABIT CHANGES AND GROWTH MECHANISMS OF IN2O3 GROWN FROM PBO-B2O3 MELTS [J].