ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS

被引：583

作者：

FRANK, G

KOSTLIN, H

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 27卷 / 04期

关键词：

D O I：

10.1007/BF00619080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：197 / 206

页数：10

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