EBIC CHARACTERIZATION OF RECRYSTALLIZED HGCDTE

被引：20

作者：

TREGILGAS, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：208 / 211

页数：4

共 13 条

[1]

ANDERSON P, 1981, OCT US WORKSH PHYS C

[2] ELECTRON-BEAM PROBE STUDIES OF SEMICONDUCTOR-INSULATOR INTERFACES [J].

BOTTOMS, WR ;

GUTERMAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :965-971

[3]

BRAU M, AFMLTR73881973 AIR F

[4] MINORITY-CARRIER DIFFUSION LENGTH IN SI-RIBBON SOLAR-CELLS [J].

IKAWA, Y ;

HOJO, A ;

NAKAGAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :315-318

[5] INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES [J].

KOCK, AJRD ;

FERRIS, SD ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :313-315

[6] EBIC CHARACTERIZATION OF HGCDTE CRYSTALS AND PHOTO-DIODES [J].

LANIR, M ;

VANDERWYCK, AHB ;

WANG, CC .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (02) :175-189

[7]

Leamy H. J., 1976, Scanning Electron Microscopy 1976. I, P529

[8]

LEEDY KO, 1977, SOLID STATE TECHNOL, V20, P45

[9] INFLUENCE OF MICRODEFECTS ON CHARGE-CARRIERS IN SILICON [J].

MENNIGER, H ;

RAIDT, H ;

VOIGT, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02) :639-643

[10] ELECTRON-BEAM-INDUCED CURRENT AND TEM STUDIES OF STACKING-FAULTS FORMED BY OXIDATION OF BORON-IMPLANTED SILICON [J].

SEIDEL, TE ;

HASZKO, SE ;

MAHER, DM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5038-5042

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