ELECTRON-BEAM-INDUCED CURRENT AND TEM STUDIES OF STACKING-FAULTS FORMED BY OXIDATION OF BORON-IMPLANTED SILICON

被引：7

作者：

SEIDEL, TE

HASZKO, SE

MAHER, DM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.323630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5038 / 5042

页数：5

共 9 条

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[2]

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[3]

LEAMY H, 1977, SEMICONDUCTOR SILICO

[4] REDUCED GAIN OF ION-IMPLANTED TRANSISTORS [J].

NICHOLAS, KH ;

FORD, RA ;

DANIEL, PJ ;

SULLIVAN, CW ;

SANT, P ;

BULL, C ;

BOOKER, GR .

APPLIED PHYSICS LETTERS, 1975, 26 (06) :320-322

[5] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J].

PRUSSIN, S .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1635-1642

[6]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[7]

RAVI KV, 1973, SEMICONDUCTOR SILICO, P136

[8] TRANSISTORS WITH BORON BASES PRE-DEPOSITED BY ION-IMPLANTATION AND ANNEALED IN VARIOUS OXYGEN AMBIENTS [J].

SEIDEL, TE ;

PAYNE, RS ;

MOLINE, RA ;

COSTELLO, WR ;

TSAI, JCC ;

GARDNER, KR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :717-723

[9]

VARKER CN, 1973, SEMICONDUCTOR SILICO, P670

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