MEAN THICKNESS AT WHICH VAPOR-DEPOSITED THIN-FILMS REACH CONTINUITY

被引:27
作者
KASHCHIEV, D
机构
关键词
D O I
10.1016/0040-6090(78)90157-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:399 / 411
页数:13
相关论文
共 25 条
[1]   KINETICS OF THIN-FILM GROWTH UNDER HIGH ADATOM CONCENTRATIONS [J].
ALEKSANDROV, LN ;
ENTIN, IA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :327-330
[2]   Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) :177-184
[3]   Kinetics of phase change I - General theory [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1939, 7 (12) :1103-1112
[4]  
Avrami M., 1940, J CHEM PHYS, V8, P212, DOI [DOI 10.1063/1.1750631, 10.1063/1.1750631]
[5]   NUCLEATION KINETICS OF SILVER DEPOSITED ONTO UHV CLEAVED SURFACES OF NACL, KCL AND KBR [J].
DONOHOE, AJ ;
ROBINS, JL .
THIN SOLID FILMS, 1976, 33 (03) :363-372
[6]  
KASHCHIEV D, 1977, J CRYST GROWTH, V40, P29, DOI 10.1016/0022-0248(77)90029-X
[7]   TRANSITION FROM ISLAND TO LAYER GROWTH OF THIN-FILMS - MONTE-CARLO SIMULATION [J].
KASHCHIEV, D ;
VANDEREERDEN, JP ;
VANLEEUWEN, C .
JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :47-58
[8]  
KOLMOGOROFF AN, 1937, B ACAD SCI URSS SCI, V3, P355