TEMPERATURE-DEPENDENCE OF SEMICONDUCTOR BAND-GAPS

被引：982

作者：

ODONNELL, KP

CHEN, X

机构：

[1] University of Strathclyde, Glasgow

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期

关键词：

D O I：

10.1063/1.104723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The application of a simple three-parameter fit to the temperature dependence of semiconductor band gaps is justified on both practical and theoretical grounds. In all trials the fit is numerically better than that obtained using the widely quoted Varshni equation. The formula is shown to be compatible with reasonable assumptions about the influence of phonons on the band-gap energy. Approximate analytical expressions are derived for the entropy and enthalpy of formation of electron-hole pairs in semiconductors.

引用

页码：2924 / 2926

页数：3

共 21 条

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