THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES

被引:331
作者
ALLEN, PB
HEINE, V
机构
[1] CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
[2] SUNY STONY BROOK,DEPT PHYS,STONY BROOK,NY 11794
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 12期
关键词
D O I
10.1088/0022-3719/9/12/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2305 / 2312
页数:8
相关论文
共 16 条
  • [1] Antoncik E., 1955, CZECH J PHYS, V5, P449
  • [2] TEMPERATURE-DEPENDENCE OF BAND-GAP IN SEMICONDUCTORS
    BAUMANN, K
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (01): : K71 - K74
  • [3] Brooks H., 1955, ADV ELECTRON, V7, P121
  • [4] Brooks H., 1955, ADV ELECTRON, V7, P85
  • [5] SPECIFIC HEAT OF METALS AT LOW TEMPERATURES
    BUCKINGHAM, MJ
    [J]. NATURE, 1951, 168 (4268) : 281 - 282
  • [6] Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3
  • [7] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS
    FAN, HY
    [J]. PHYSICAL REVIEW, 1951, 82 (06): : 900 - 905
  • [8] TEMPERATURE-DEPENDENCE OF HGTE BAND-GAP
    GUENZER, CS
    BIENENSTOCK, A
    [J]. PHYSICAL REVIEW B, 1973, 8 (10) : 4655 - 4667
  • [9] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS
    HEINE, V
    JONES, RO
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04): : 719 - &
  • [10] HOPFIELD JJ, 1968, COMMENTS SOLID STATE, V1, P16