AN OVERVIEW OF CMOS-SOI TECHNOLOGY AND ITS POTENTIAL USE IN PARTICLE-DETECTION SYSTEMS

被引:6
作者
COLINGE, JP
机构
[1] IMEC, 3001 Leuven
关键词
D O I
10.1016/0168-9002(91)90164-L
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon-on-insulator (SOI) is a rapidly evolving technology. In a few years. it has evolved from materials research to high-leverage integrated circuits applications. SOI MOSFETs have several unique properties which make SOI technology very attractive for integration in the deep-submicron regime. In addition. SOI devices are inherently much more resistant to ionizing particles than bulk transistors. SOI devices are also the building blocks of three-dimensional ICs, which offer interesting possibilities in the field of smart sensors with on-chip signal processing.
引用
收藏
页码:615 / 619
页数:5
相关论文
共 15 条
[1]  
AE T, 1988, 5TH INT WORKSH FUT E, P55
[2]   3D technologies [J].
Akasaka, Yoichi .
Microelectronic Engineering, 1988, 8 (3-4) :219-233
[3]  
AUBERTONHERVE AJ, 1990, ECS, V90, P455
[4]   MONOLITHIC INTEGRATION OF A NUCLEAR RADIATION SENSOR AND TRANSISTORS ON HIGH-PURITY SILICON [J].
AUDET, SA ;
WOUTERS, SE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (01) :15-20
[5]  
CELLER GK, 1990, ELECTROCHEMICAL SOC, V90, P472
[6]  
Colinge J.-P., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P817, DOI 10.1109/IEDM.1989.74178
[7]   CONDUCTION MECHANISMS IN THIN-FILM ACCUMULATION-MODE SOI P-CHANNEL MOSFETS [J].
COLINGE, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :718-723
[8]  
Davis G. E., 1988, MATER RES SOC S P, V107, P317
[10]  
DUPONTNIVET E, 1990, IEEE T NUCL SCI, V37, P2013