POLYTHIENYLENEVINYLENE THIN-FILM-TRANSISTOR WITH HIGH CARRIER MOBILITY

被引：182

作者：

FUCHIGAMI, H

TSUMURA, A

KOEZUKA, H

机构：

[1] Mitsubishi Electric Corporation, Materials and Electronic Devices Laboratory, Amagasaki, Hyogo 661, 1-1

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thin-film transistor (TFT) with high carrier mobility has been fabricated using precursor-route poly(2,5-thienylenevinylene) (PTV) as semiconductor. The carrier mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the carrier mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to pi-conjugated PTV. The pi-conjugation length is crucial to obtain high carrier mobility in pi-conjugated polymer TFT.

引用

页码：1372 / 1374

页数：3

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