155-GHZ AND 213-GHZ ALINAS/GAINAS/INP HEMT MMIC OSCILLATORS

被引：45

作者：

ROSENBAUM, SE ^{[1
]}

KORMANYOS, BK ^{[1
]}

JELLOIAN, LM ^{[1
]}

MATLOUBIAN, M ^{[1
]}

BROWN, AS ^{[1
]}

LARSON, LE ^{[1
]}

NGUYEN, LD ^{[1
]}

THOMPSON, MA ^{[1
]}

KATEHI, LPB ^{[1
]}

REBEIZ, GM ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 04期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.375256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlI-nAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date, The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source sparing of 0.25 mu m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

引用

页码：927 / 932

页数：6

共 14 条

[1]

BASAWAPATNA GR, 1979, IEEE T MICROW THEORY, V27, P379, DOI 10.1109/TMTT.1979.1129636

[2]

BROWN AS, 1988, J VAC SCI TECHNOL B, V6

[3] MODELING OF SHIELDED CPW DISCONTINUITIES USING THE SPACE DOMAIN INTEGRAL-EQUATION METHOD (SDIE) [J].

DIB, NI ;

KATEHI, PB .

JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, 1991, 5 (4-5) :503-523

[4]

HAYDL WH, 1992, IEEE MICROWAVE THEOR, P369

[5]

KORMANYOS BK, 1994, IEEE MTT-S, P835, DOI 10.1109/MWSYM.1994.335227

[6] CPW-FED ACTIVE SLOT ANTENNAS [J].

KORMANYOS, BK ;

HAROKOPUS, W ;

KATEHI, LPB ;

REBEIZ, GM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (04) :541-545

[7]

KORMANYOS BK, 1993, MICROWAVE J, V36, P103

[8]

KORMANYOS BK, 1994, IEEE MICROWAVE GUIDE, V4

[9]

KWON Y, 1993, IEEE T MICROWAVE THE, V37, P2336

[10]

Mishra U. K., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P101, DOI 10.1109/IEDM.1989.74237

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