155-GHZ AND 213-GHZ ALINAS/GAINAS/INP HEMT MMIC OSCILLATORS

被引：45

作者：

ROSENBAUM, SE ^{[1
]}

KORMANYOS, BK ^{[1
]}

JELLOIAN, LM ^{[1
]}

MATLOUBIAN, M ^{[1
]}

BROWN, AS ^{[1
]}

LARSON, LE ^{[1
]}

NGUYEN, LD ^{[1
]}

THOMPSON, MA ^{[1
]}

KATEHI, LPB ^{[1
]}

REBEIZ, GM ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 04期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.375256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlI-nAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date, The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source sparing of 0.25 mu m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

引用

页码：927 / 932

页数：6