THERMOCHROMIC PROPERTY OF TELLURITE GLASSES CONTAINING TRANSITION-METAL OXIDES

被引：23

作者：

INOUE, S ^{[1
]}

SHIMIZUGAWA, Y ^{[1
]}

NUKUI, A ^{[1
]}

MAESATO, T ^{[1
]}

机构：

[1] SHINKO PANTEC CO LTD,NISHI KU,KOBE 65122,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 189卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(95)00205-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thermochromic properties of the tellurite glasses containing transition metal oxides have been measured. The transmission spectra were measured in the range from the UV to the visible region at various temperatures below the glass transition temperatures. The cut-off wavelength in the optical spectra was shifted toward 'red' wavelengths at rates of approximately 8 x 10(-4) eV/K with increasing temperature. The shift of the transmission edge with temperature took place reversibly. The shift rates were compared with those of lead-silicate and lead-berate glasses containing transition metal oxides.

引用

页码：36 / 42

页数：7

共 10 条

[1] THERMOCHROMISM [J].

DAY, JH .

CHEMICAL REVIEWS, 1963, 63 (01) :65-&

[2]

ELLIOT SR, 1983, PHYSICS AMORPHOUS MA, P234

[3] SEMICONDUCTOR-TO-METAL TRANSITION IN V2O3 [J].

FEINLEIB, J ;

PAUL, W .

PHYSICAL REVIEW, 1967, 155 (03) :841-+

[4]

Fergason J.L., 1963, Thermal Imaging Devices Utilizing a Cholesteric Liquid Crystalline Phase Material, Patent No. [US 3,114,836, 3114836]

[5] FORMATION AND THERMOCHROMISM OF VO(2) FILMS DEPOSITED BY RF MAGNETRON SPUTTERING AT LOW SUBSTRATE-TEMPERATURE [J].

JIN, P ;

TANEMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (3A) :1478-1483

[6]

Jones W.J., 1969, U. S. Patent, Patent No. [1,14 3,440,882, 3440882]

[7] TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF OPTICAL-ABSORPTION EDGE IN GLASSES CONTAINING PBO AND TEO2 [J].

LI, GM ;

NOGAMI, M ;

ABE, Y .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (09) :2319-2322

[8]

MARFUNIN AS, 1979, PHYSICS MINERALS INO, P234

[9]

OGAWA S, 1991, 3RD P INT S NEW GLAS, P112

[10] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].

VARSHNI, YP .

PHYSICA, 1967, 34 (01) :149-&

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