AVALANCHE MULTIPLICATION IN GASB PN-JUNCTIONS

被引:3
作者
HAECKER, W [1 ]
机构
[1] UNIV STUTTGART,PHYS INST,STUTTGART,WEST GERMANY
关键词
D O I
10.1016/0038-1101(74)90053-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:993 / 994
页数:2
相关论文
共 6 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]   INJECTION ELECTROLUMINESCENCE IN GALLIUM ANTIMONIDE [J].
CALAWA, AR .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1660-&
[3]  
CHYNOWETH AG, 1968, SEMICONDUCTORS SEMIM, V4
[4]   CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J].
LOGAN, RA ;
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1649-&
[5]   PHONON ASSIGNMENTS IN ZNSE AND GASB AND SOME REGULARITIES IN PHONON FREQUENCIES OF ZINCBLENDE-TYPE SEMICONDUCTORS [J].
MITRA, SS .
PHYSICAL REVIEW, 1963, 132 (03) :986-+
[6]  
SZE SM, 1969, PHYSICS SEMICONDUCTO