TEMPERATURE RISE OF SMALL SILICON PARTICLES DURING LASER IRRADIATION

被引：4

作者：

OKADA, T ^{[1
]}

YAMAMOTO, K ^{[1
]}

机构：

[1] KOBE UNIV,FAC ENGN,DEPT ELECTR ENGN,KOBE 657,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期

关键词：

D O I：

10.1143/JJAP.26.2134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2134 / 2135

页数：2

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