IMPLICATION OF AMORPHOUS-LIKE RAMAN-SPECTRA OF GAS-EVAPORATED SI AND GE MICROCRYSTALS

被引：45

作者：

HAYASHI, S

ABE, H

机构：

[1] Kyoto Inst of Technology, Dep of, Electrical Engineering, Kyoto, Jpn, Kyoto Inst of Technology, Dep of Electrical Engineering, Kyoto, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

收藏

页码：L824 / L826

页数：3

相关论文

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