IMPLICATION OF AMORPHOUS-LIKE RAMAN-SPECTRA OF GAS-EVAPORATED SI AND GE MICROCRYSTALS

被引：45

作者：

HAYASHI, S

ABE, H

机构：

[1] Kyoto Inst of Technology, Dep of, Electrical Engineering, Kyoto, Jpn, Kyoto Inst of Technology, Dep of Electrical Engineering, Kyoto, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

收藏

页码：L824 / L826

页数：3

相关论文

共 18 条

[11] RAMAN STUDY OF LASER ANNEALED SILICON
MORHANGE, JF
KANELLIS, G
BALKANSKI, M
[J]. SOLID STATE COMMUNICATIONS, 1979, 31 (11) : 805 - 808
[12] RAMAN-SCATTERING FROM GAS-EVAPORATED SILICON SMALL PARTICLES
OKADA, T
IWAKI, T
YAMAMOTO, K
KASAHARA, H
ABE, K
[J]. SOLID STATE COMMUNICATIONS, 1984, 49 (08) : 809 - 812
[13] CRYSTAL-STRUCTURE AND HABIT OF SILICON AND GERMANIUM PARTICLES GROWN IN ARGON GAS
SAITO, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (01) : 61 - 72
[14] SAITO Y, 1980, VIDE COUCHES MINCE S, V201, P727
[15] SAITO Y, 1983, HYOMEN SURFACE, V21, P695
[16] ELECTRON-MICROSCOPIC STUDIES OF STRUCTURE AND CRYSTALLIZATION OF AMORPHOUS METAL-OXIDE FILMS
SHIOJIRI, M
MIYANO, T
KAITO, C
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) : 1937 - 1945
[17] SMITH JE, 1971, 2ND P INT C LIGHT SC, P330
[18] CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS
TSU, R
GONZALEZHERNANDEZ, J
CHAO, SS
LEE, SC
TANAKA, K
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 534 - 535